Product, 제품소개
Sapphire
Quartz
SiC
Si
Glass
Sputtering Targets & Sources
Others
SiC
 HOME  제품소개  SiC
2 inch
Property
Specification
Diameter
 50.8 mm ± 0.38 mm (2.000" ± 0.015")
Thickness
 330 / 430 ±25 ㎛
Wafer Orientation
 On axis : <0001> ± 0.5˚
Off axis : 1.0 / 3.5 / 4.0 / 8.0
toward<11-20> ± 0.5˚
Primary Flat Orientation
 (10-10) ± 5.0˚
Secondary Flat Orientaton
 Silicon face up : 90° cw. from Prime flat ± 5°
Micropipe Density
 ≤ 5cm-2
Resistivity
4H-N
6H-N
4H/6H-SI
0.01 Ω·cm ~ 0.03 Ω·cm
0.02 Ω·cm ~ 0.1 Ω·cm
(90%) > 1E5 Ω·cm
Grade
 Product / Research / Dummy
3 inch
Property
Specification
Diameter
 76.2 mm ± 0.38 mm (3.000" ± 0.015")
Thickness
 350 ± 25 ㎛
Wafer Orientation
 On axis : <0001> ± 0.5˚ for 6H-N/4H-N/6H-SI
Off axis : 4.0 toward
<11-20> ± 0.5˚ for 4H-N/4H
Primary Flat Orientation
 (10-10) ± 5.0˚
Secondary Flat Orientaton
 Silicon face up : 90° cw. from Prime flat ± 5°
Micropipe Density
 ≤ 5cm-2
Resistivity
4H-N
6H-N
4H/6H-SI
0.01 Ω·cm ~ 0.03 Ω·cm
0.02 Ω·cm ~ 0.1 Ω·cm
(90%) > 1E5 Ω·cm
Grade
 Product / Research / Dummy
4 inch
Property
Specification
Diameter
 100.0 mm ± 0.50 mm (4.000" ± 0.015")
Thickness
 350 ± 2 ㎛
Wafer Orientation
 Off axis : 4.0 toward <11-20> ± 0.5˚
Primary Flat Orientation
 (10-10) ± 5.0˚
Secondary Flat Orientaton
 Silicon face up : 90° cw. from Prime flat ± 5°
Micropipe Density
 ≤ 5cm-2
Resistivity
4H-N
6H-N
4H/6H-SI
0.01 Ω·cm ~ 0.03 Ω·cm
-
-
Grade
 Product / Research / Dummy